SSM6N16FUTE85LF
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likeSSM6N16FUTE85LF
Brand：Toshiba
Model：SSM6N16FUTE85LF
stock：6655
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥0.67
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 6-TSSOP,SC-88,SOT-363 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 200mW |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 20V |
| Current at 25 ° C - continuous drain (Id) | 100mA |
| On resistance (maximum) for different Ids and Vgs | 3 Ω @ 10mA,4V |
| Vgs (th) (maximum) for different Ids | 1.1V @ 100µA |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Input capacitance at different Vds (Ciss) (maximum) | 9.3pF @ 3V |
| FET function | standard |
Common problem
Industry trends
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
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